VB20200G-E3/8W【PDF 1/5 页】DIODE 20A 200V DUAL SCHOTTKY

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V20200G, VF20200G, VB20200G, VI20200G

www.vishay.com

Vishay General Semiconductor

Revision: 16-Aug-13

Document Number: 89117

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF

= 0.62 V at I

= 5 A

FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Low thermal resistance

? Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

? Solder bath temperature 275 °C

maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB and TO-262AA

package)

? Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

Molding compound meets UL 94

V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102?

E3 suffix meets JESD 201 class 1A whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs max.

PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

200 V

IFSM

110 A

VF at IF

= 10 A 0.71 V

max. 150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations Common cathode

TO-220AB

V20200G VF20200G1

TO-263AB

TO-262AA

PIN 1

PIN 2

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

PIN 3

VI20200G

VB20200G

TMBS?

ITO-220AB

MAXIMUM RATINGS

= 25 °C unless otherwise noted)

PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT

Max. repetitive peak reverse voltage VRRM

200 V

Max. average forward rectified current (fig. 1)

per device

per diode 10IF(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

110 A

Non-repetitive avalanche energy at TJ

= 25 °C, L = 60 mH

per diode

EAS

60 mJ

Peak repetitive reverse current at tp

= 2 μs, 1 kHz,

= 38 °C ± 2 °C per diode

IRRM

0.5 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Isolation voltage (ITO-220AB only)?

from terminal to heatsink t = 1 min

VAC

1500 V

Operating junction and storage temperature range TJ, TSTG

- 40 to + 150 °C

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